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BD139 Datasheet, Equivalent, NPN Transistor.

Silicon NPN Transistor

Silicon NPN Transistor

 

 

 

Part BD139
Description Silicon NPN Transistor
Feature SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMP LIFIER APPLICATIONS.
FEATURES .
Designe d for Complementary Use with BD136, BD1 38 and BD140.
7.
9MAX.
Unit in mm MAX IMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 B D139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Coll ector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 4 5 60 80 45 60 80 0.
5 1.
5 PC L stg 6.
5 150 -55-150 UNIT 1.
EMITTER Z.
COLLE CTOR (HEAT S IN .
Manufacture Toshiba
Datasheet
Download BD139 Datasheet
Part BD139
Description Silicon NPN Transistor
Feature SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMP LIFIER APPLICATIONS.
FEATURES .
Designe d for Complementary Use with BD136, BD1 38 and BD140.
7.
9MAX.
Unit in mm MAX IMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 B D139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Coll ector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 4 5 60 80 45 60 80 0.
5 1.
5 PC L stg 6.
5 150 -55-150 UNIT 1.
EMITTER Z.
COLLE CTOR (HEAT S IN .
Manufacture Toshiba
Datasheet
Download BD139 Datasheet

BD139

BD139
BD139

BD139

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