BD136 BD138
IBD140I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES . Designed ...
BD136 BD138
IBD140I
SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES . Designed for Complementary Use with BD135, BD137
and BD139
7.9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BD136 BD138 BD140
VCBO
Collector-Emitter Voltage
BD136 BD138 BD140
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25°C Tc^60°C
VcEO
VEBO
ic ICM
Junction Temperature
Storage Temperature Range
L stg
RATING -45 -60 -80 -45 -60 -80 -5
-0.5 -1.5
6.5 150
-55-150
UNIT
1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE
TO— 126 TOSHIBA Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
BD136 BD138 BD140
ICBO lEBO
V C B=-30V, I E =0 VCB=-30V, I E=0, Ta=125°C V£B=-5V, I C =0
-45
V (BR) CEO IC=-30mA, Ib=0
-60 -80
DC Current Gain
hFE(l) VCE=-2V, I C...
