TYPE TRANSISTOR. BD235 Datasheet

BD235 Datasheet PDF, Equivalent


Part Number

BD235

Description

SILICON NPN EPITAXIAL BASE MESA TYPE TRANSISTOR

Manufacture

Toshiba

Total Page 3 Pages
PDF Download
Download BD235 Datasheet PDF


BD235 Datasheet
:
SILICON NPN EPITAXIAL BASE MESA TYPE
AUDIO POWER AMPLIFIER APPLICATIONS.
VERTICAL DEFLECTION OUTPUT APPLICATION IN TV.
FEATURES
. Designed for Complementary Use with BD234, BD236
and BD238
BD233
BD235
IBD237
7.9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
Collector-Base
Voltage
BD233
BD235
BD237
Collector-Emitter
Voltage
BD233
BD235
BD237
Emitter-Base Voltage
Collector Current
DC
Peak
Base Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
Vebo
IC
ICM
IB
PC
L stg
RATING
45
60
100
45
60
80
25
150
-55-150
UNIT
JEDEC
1. EMITTER
2. COLLECTOR (HEAT SINK)
3. BASE
TO— 126
TOSHIBA
Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC
SYMBOL
Collector Cut-off
Current
BD233
BD235
BD237
ICBO
Emitter Cut-off Current
lEBO
DC Current Gain
Collector-Emitter
Saturation Voltage
hFE(l)
hFE(2)
v CE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
TEST CONDITION
VcB=45V, l£=0
V CB=60V, I E=0
V CB=100V, I E=0
V EB=5V, I C=0
VCE=2V, Ic=150mA
VCE=2V, I C=1A
I C=1A, I B=0.1A
V CE=2V, I C=1A
V CE=10V, Ic=250mA
MIN. TYP. MAX. UNIT
M- - 100
--
40 -
25 -
1 mA
-
-
- 0.6 V
- - 1.3 V
3 40 - MHz
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BD235 Datasheet
BD233*BD235*BD237
I
In - V
H 300
h PE - In
COMMON EMITTER
Tc=2 5°C
VCE =10V
s 55 fe^
v" = /KS
5
/\-i-
2
|
12 16 20
COLLECTOR- -EMITTER VOLTAGE VCE (V)
v CE(sat)
0.3 Tc = 2 5°C
01
So
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KO
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h3 Eh
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o
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ao5
^
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.
50 100
300 500 1000
COLLECTOR CURRENT I c (mA)
2000
50 100
300 500 1000 2000
COLLECTOR CURRENT I c (mA)
I 2 ~- V BE
2.0
COMMON EMITTER
VCE =2V
1.6
/
1
/,
1
1 ?.
o i ^n
II
c
0.4
iz
1
/i
/V
« 4T*
04 ae
BASE-EMITTER V0LTAOE
VBE (V)
h FE ~ J C
500
COMMON ff.MTTTER
300
Tc^lOOt
100
25
... ....
v CE =iov
2V
"^ ~ "
!SS - -
* ' *^^v
" ^^«S^rSs
^
50 100
300 500 1000 2000
COLLECTOR CURRENT I c (mA)
v CE(sat) - Ic
a3 I C /I B =10
aim
E-i
« 0.05
S<
o
o
p>
Q.02
20
^"0.-C.
,o ^:
;'"^So^^
50 100
300 500 1000 2000
COLLECTOR CURRENT I c ( mA)
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Features Datasheet pdf : SILICON NPN EPITAXIAL BASE MESA TYPE A UDIO POWER AMPLIFIER APPLICATIONS. VERT ICAL DEFLECTION OUTPUT APPLICATION IN T V. FEATURES . Designed for Complementar y Use with BD234, BD236 and BD238 BD23 3 BD235 IBD237 7.9 MAX. Unit in mm M AXIMUM RATINGS (Ta=25°c) CHARACTERIST IC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD23 3 BD235 BD237 Emitter-Base Voltage Co llector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperat ure Range SYMBOL VCBO VCEO Vebo IC ICM IB PC L stg RATING 45 60 100 45 60 80 25 150 -55-150 UNIT JEDEC 1. EMITTE R 2. COLLECTOR (HEAT SINK) 3. BASE TO 126 TOSHIBA Weight : 0.72g ELECTRIC AL CHARACTERISTICS (Ta=25°c) CHARACTE RISTIC SYMBOL Collector Cut-off Curre nt BD233 BD235 BD237 ICBO Emitter Cu t-off Current lEBO DC Current Gain Co llector-Emitter Saturation Voltage hFE (l) hFE(2) v CE(sat) Base-Emitter Volt age VBE Transition Frequency fT TEST CONDITION VcB=45V, l£.
Keywords BD235, datasheet, pdf, Toshiba, SILICON, NPN, EPITAXIAL, BASE, MESA, TYPE, TRANSISTOR, D235, 235, 35, BD23, BD2, BD, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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