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BU126 Dataheets PDF



Part Number BU126
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet BU126 DatasheetBU126 Datasheet (PDF)

: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA • High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0—a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Current DC Peak VCES VCEX (-V .

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS. FEATURES . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage : V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA • High speed : tf=0.15ys (Typ.) Unit in mm s025OMAX. Zfel.0 MAX. , +ao9 01.0—a 03 TJT-l- 30.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Current DC Peak VCES VCEX (-V BE =1.5V VCEO IC ICM -ICM RATING 750 750 300 UNIT 1. BASE 2. EMITTER COLLECTOR ^CASE) TO — TOSHIBA TC— 3 , TB— 2— 21B1A Mounting Kit No. AC42C Weight : 17.0g DC IB Base Current Peak IBM _I B(AV) 100 (DC or averaged over any 20mS period) mA -IBM 1.5 Total Collector Power Dissipation (Tc=25°C) Junction Temperature (turn-off current) tot 50 150 Storage Temperature Range Thermal Resistance L stg Rth(j-c) -65-150 2.5 C/W 1035- TOSHIBA CORPORATION BU126 ELEC.


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