:
SILICON NPN TRIPLE DIFFUSED TYPE
)
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . High Breakdown Voltage : VC...
:
SILICON
NPN TRIPLE DIFFUSED TYPE
)
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax.
. Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency
Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VcEO VeBO ic IB PC
T
J
T stg
RATING 100 100
5 5
0.5 40
UNIT V V V A A W
150
-55^150
°C °C
10/3 MAX
7.0 03.2 i 0.2
~g" r~*
/
'1
*
-
L
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
El AJ
TOSHIBA
-
2-10K1A
Weight : 2.0g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC...
