:
SILICON NPN TRIPLE DIFFUSED TYPE
2SD1356
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Power Dissipation : P C=30W (...
:
SILICON
NPN TRIPLE DIFFUSED TYPE
2SD1356
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of hEE . Complementary to 2SB996 . Recommended for 20 — 25W High Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm 0&2±a2
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO v EBO ic IB
PC
T
j
T stg
RATING 80 80
5 4
0.4
UNIT V V V A A
30 W
150
-55-150
°C °C
1. BASE 2. collector Cheat sink) 3. EMITTER
TOSHIBA Weight : 2.1
2-10K.1A
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP.
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
ICB0 !eB0
V CB=80V, I E=0 V E B=5V, I C=0
v (BR)CE0 I c=50mA, I B=0
v (BR)...
