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2SD1359

Toshiba

Silicon NPN Transistor

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER...


Toshiba

2SD1359

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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURESr . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD1357 2SD1358 2SD1359 VcBO Collector-Emitter Voltage 2SD1357 2SD1358 2SD1359 VCEO Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT VEBO ic IB ?C T.i T fitg Tt ^5kQ ELECTRICAL CHARACTERISTICS (Ta=25°c) CHARACTERISTIC SYMBOL Collector Cut-off Current 2SD1357 2SD1358 2SD1359 ICBO Emitter Cut-off Current lEBO Collector-Emitter Breakdwon Voltage 2SD1357 2SD1358 2SD1359 V (BR) CEO DC Current Gain Collector-Emitter...




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