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2SD1362

Toshiba

Silicon NPN Transistor

: 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm ...


Toshiba

2SD1362

File Download Download 2SD1362 Datasheet


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: 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992 (at Ic=4A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO VcEO VeBO ic RATING 100 80 UNIT V 10.3MAX, 7.0 03.2±O.2 1/ r~ y & i. to c5 X < s to a w -H o o IS iri ji T1 | . 1.2 a 1.4 + 0.25 0.76-0.15 2.54 ±02^ \ 1 ,_ 2.54 ±0.25 iOO +1 ,i !! c3 €Hi=!: Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB PC 1.5 40 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature Storage Temperature Range Tstg ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitte...




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