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2SD1410

Toshiba

NPN Transistor

2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. ...


Toshiba

2SD1410

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2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=2000(Min. ) (Vce=2V, Ic=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 03.2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range EQUIVALENT CIRCUIT BASE o- I lyvv SYMBOL RATING VCBO 300 VcEO 250 Vebo 5 ic 6 IB PC T J T stg 1 2.0 25 150 -55-150 COLLECTOR UNIT V V V A A W °C °C 1 1. BASE 2. COLLECTOR 3. EMITTER TOSHIBA 2-10L1A Weight : 2.1g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage ICB0 lEBO VC B=300V, I E=0 V EB=5V, I C =0 v CE0(SUS) I C=0.5A, L=40mH 250 DC Current Gain Collector-...




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