:
2SD1411
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURE...
:
2SD1411
SILICON
NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
FEATURES
. Low Saturation Voltage : vCE(sat)=0.5V(Max.)
. Complementary to 2SB1018
at I C=4A
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO
100
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
80
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
IB
2.0 30
1. BASE 2. COLLECTOR 3 EMITTER
Junction Temperature
150
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
-55-150
TOSHIBA
2-10L1A
Weight : 2.1g
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
ICBO lEBO
VCB=100V, I E=0 V EB=5V, I C=0
v (BR) CEO IC=50mA, Ib=0
__ --
80 -
5 mA
5 ixk
-V
DC Current Gain
h FE(l) (Note)
V CE=1V, I C =1A
70 - 240
h FE(2) VCE=1V, I C=4A
30 -
-
Saturation Co...
