SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain ...
SILICON
NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A) Low Saturation Voltage V C E( S at) =1 - 5v (Max.)(I c=3A) Monolithic Cnstruction with Built-in Base-
Emitter Shunt Resistor.
Unit in mm
015.7MAX
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT BASEo
SYMBOL VcBO VCEO VEBO ic
PC
T stg
RATING 80 80
UNIT
0.2 40
150 -65M.50
OLLECTOR
1 BASE Z EMITTER
COLLECTOR(CASE)
TO — 66 TC — 16A, TB
Mounting Kit No. AC74 Weight : 5.9g
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage
(Ta=25°c) SYMBOL ICBO I EB0
V (BR...
