DatasheetsPDF.com

2SD684

Toshiba

NPN Transistor

2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS....


Toshiba

2SD684

File Download Download 2SD684 Datasheet


Description
2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES High DC Current Gain : hFE=1500 (Min.) (VCE=2V, I C=2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO v CEO Vebo XC IB PC T1 Tste RATING 600 300 5 6 1 UNIT V V V A A 30 150 -65VL50 W °C °C 'COLLECTOR 1. BASE 2. EMITTER COLLECTOR (CASE) TO 66 TC — 16A, TB 2 — 13 A 1 A I I ~2yk^Qif1 ELECTRICAL CHARACTERISTICS (Ta=25°C) EMITTER Mounting Kit No. AC74 Weight : 5.9g CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain SYMBOL I CBO I EB0 V CE0(SUS) hFE(l) hFE(2) TEST CONDITION VCB=600V, I E=0 V EB=5V, I C=0 IC=0.5A, L=4...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)