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2SD685

Toshiba

NPN Transistor

2SD685 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING...


Toshiba

2SD685

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2SD685 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS. FEATURES : . High DC Current Gain : hFE =400 (Min.)(VCE =2V, I C=4A) . High Reverse Energy : Es/g=245mJ (Min.) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT —BASE o SYMBOL VCBO vCEO vebo ic IB PC T.1 Tstg RATING 600 400 i 10 2 100 150 -65vL50 UNIT V V V A A W *C °C JEDEC EIAJ L BASE Z. EMITTER COLLECTOR (CASE) TO TC - 3, TB 2 — 21A 1 A ELECTRICAL CHARACTERISTICS (Ta=25°C) EMITTER Mounting kit No. AC73 Weight : 12. 9g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current...




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