:h
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
FEATURES . Low Collector ...
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SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
FEATURES . Low Collector Saturation Voltage
: VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . 0/is(Typ . )
10.3MAX.
—70 03.2±O.2
r 1/
/
i
< A\ei
j
X < s
rfl -H
o
r-'
. Complementary to 2SA1307
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING 60 50
UNIT
j
'
1.4
+ 0.25
0.76-0.15
I
,1
1.2
2.54±0.25
2.54 ±0.25
...
s H
oo
+ 1 —-I—!
Collector Current
Base Current Collector Power Dissipation
Ta=25 C Tc=25°C
ic IB PC
2.0 20
1. BASE 2. COLLECTOR 3. EMITTER
Junction Temperature
150
Storage Temperature Range
Tstt
ELECTRICAL CHARACTERISTICS (Ta =25°C)
-55-150
TOSHIBA
2-1 0L1A
Weight : 2.1$
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICBO
V C B=50V, I E=0
-_
1 aA
Emitter Cut-off Current
Collector-E...
