:A
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Vo...
:A
SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Voltage
: vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308.
INDUSTRIAL APPLICATIONS Unit in mm
1H3MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL VcBO VCEO VEBO ic ICP
RATING 100 80
PC 30
Tstg
150
-55-150
UNIT
1. BASE 2. COLLECTOR (HEAT SINK' 3. EMITTER °C
JEDEC
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
lEBO v (BR)CE0
TOSHIBA
2-1 OKI
Weight : 2. 3g
TEST CONDITION VCB=100V, I E=0 VEB=7V, I C =0
MIN.
-
TYP. -
MAX.
1 1
IC=10mA, I B =0
80 -
-
UNIT mA MA
V
DC Current Gain
hFE(l) (Note...
