File No. 781 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]3LJD
Solid State Division
Power Transist...
File No. 781 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]3LJD
Solid State Division
Power
Transistors RCS882
JEDEC TO-39
High-Voltage Silicon, P-N-P
Transistor
For High·Speed Switching and Linear-Amplifier Applications in Industrial and Commercial Equipment
Features:
Maximum safe-area-of-operation curves High voltage ratings:
VCEO(sus) = -300 V max.
The RCA·RCS882 is an epitaxial silicon p-n·p
transistor with high breakdown voltages, high frequency response, and fast switching speeds. This device is provided in the JEDEC TO·39 hermetic package.
Typical applications include high·voltage differential and oper· ational amplifiers; high·voltage inverters; and high·voltage, low· current switching and series
regulators.
MAXIMUM RATINGS, Absolute-Maximum Values:
o 25 50 75 100 125 ISO 175 200
CASE TEMPERATURE (Tcl-. °C
9Zt..S-1469RI
Fig. 1 - Dissipation derating curve.
COLLECTOR·TO·BASE VOLTAGE ............................................ ,.,...
