SILICON NPN EPITAXIAL PLANAR TYPE
2SC2379
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)...
SILICON
NPN EPITAXIAL PLANAR TYPE
2SC2379
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)
(f=470MHz, VCC=12.6V, Pi=lW) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V C C=12.5V, P =6.5W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO VeBO ic
Ti L stg
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
V(BR)CB0 V (BR) CEO V(BR)EB0
DC Current Gain
hFE
Collector Output Capacitance Cob
Output Power
Po
Power Gain
Gpe
Collector Efficiency Series Equivalent Input Impedance
Series Equivalent Output Impedance
Vc Z IN
z 0UT
RATING
35 17 3.5 1.4
15
UNIT
I. EMITTER Z. BASE 3....
