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SILICON NPN EPITAXIAL PLANAR TYPE
)
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE)
FEAT...
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SILICON
NPN EPITAXIAL PLANAR TYPE
)
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE)
FEATURES
. Specified 28V, 28MHz Characteristics : Output Power : P o =150WpeP : Minimum Gain : Gpe=12.2dB : Efficiency : ^ c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL
VCBO V CES v CEO v EBO
RATING 60 60 35
20
PC 250
Tstg
175
-65-175
UNIT
°C
JEDEC
1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR
EIA J TOSHIBA
2— 13B1A
Weight : 5.2g
ELECTRICAL CHARACTERISTICS (Ta =25°c)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
v (BR) CEO V(BR)CES v (BR)EBO
DC Current Gain Collector Output Capacitance
h FE Cob
Power Gain
...
