SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=140V • ...
SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES High Breakdown Voltage : VCEO=140V High Transition Frequency : fT=90MHz (Typ.)
Complementary to 2SA1094. Recommended for 80W High-Fidelity Audio
Frequency Amplifier Output Stage.
34.3MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL V,CBO VCEO v EBO
PC
stg
RATING 140 140
12 -12 120 150 -55vL50
UNIT °C
*fe^W^S
1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER
Weight : 10.
34 A 1 A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current
SYMBOL I CB0
TEST CONDITION VCB=140V, I E=0
Emitter Cut-off Current
I EB0
V EB=5V, I C=0
Collector- Emitter Breakdown Voltage
V (BR) CEO
I C=0.1A, I B=0
Emitter-Base Breakdown Voltage
DC Current Gain
V (BR)EB0 h FE(l) (No...
