SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS....
SILICON
NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES High Breakdown Voltage : VCEQ=300V (2SC505)
: VCEO=200V (2SC506)
2SC505' 2SC506,
Unit in mm
S& 9.39 MAX
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SC505 2SC506
SYMBOL v CBO
RATING 300 200
UNIT V
Collector- Emitter Voltage
2SC505 2SC506
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V CEO
v EBO ic IB pC T
i
Tstg
300 V 200
3V
1. EMITTER 2. BASE
200 mA
3. COLLECTOR (CASE)
50 mA JEDEC
600 mW
TO-39
175 °C
TC-5, TB-5B
-65M.75
°C
TOSHIBA
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Weight : l.lAg
CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current
Collector- Base Breakdown Voltage
2SC505 2SC506
SYMBOL ICBO I EB0
TEST CONDITION
VCB=100V, IE=0 VEB =3V, I C=0
v (BR)CB0 IC=0.1mA, Ie=0
Collector- Emitter Breakdown Volta...
