2SC507

: )) SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) VIDEO AMPLIFIER APPLICATIONS HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES High Breakdown Voltage : VCBO=170V, VCEO=120V High Gain and Excellent hpg Linearity : I c= 100mA (Max.) High Transition Frequency : f T=250MHz (Typ. Low Output Capacitance : C b=2.8pF(Typ. Unit iri mm /Zfe.39MAX 08A5UAX 0OA5 1 a d 1I H a 1 05 =08 (' h 2"~N 3] ? MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VnRO v CE0 VrRO ic IB PC T.i Tstg RATING 170 120 5 100 20 750 23 175 -65VL75 '/^ UNIT V V V mA mA mW W °C °C JEDEC EIAJ 1. EMITTER 2. BASE 3. COLLECTOR(CASE) TO — 39 TC - 5,TB - 5B TOSHIBA 2 — 8B1A Weight : 1.13g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current...