SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS)
HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLI...
SILICON
NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS)
HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS.
REGULATOR APPLICATIONS.
5Tff i2SC512i
Unit in mm
09.39MAX. 08.45 MAX
FEATURES : High Braekdown Voltage : VcEO=100V (2SC510)
: VCE0= 60V (2SC512) Various Uses for Medium Power
: I c (Max.) =1.5A : P c (Max.) =800mW(Ta=25°C), 8W(Tc=25°C) Complementary to 2SA510 and 2SA512.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SC510 2SC512
V CB0
CollectorEmitter Voltage
2SC510 2SC512
V CE0
Emitter-Base Voltage Collector Current Base Current
v EB0 ic IB
Collector Power Dissipation
Ta=25°C Tc=25°C
?C
Junction Temperatuer Storage Temperature Range
T
J
T stg
RATING 140 100 100 60
5
1.5 300
800
8
175 -65M.75
UNIT V
V V A mA mW
W
°C °C
1.45
05 08.
1. EMITTER 2. BASE 3. COLLECTOR (CASE)
TO - 3£
5,TB — 5B
8B1A Weight : 1.13g
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