SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEAT...
SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES High Breakdown Voltage : VCEO=80V Complementary to 2SA816.
Unit in mm
10.3 MAX 0Z.6 ±0.2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RAINGS
VCBO v CEO Vebo ic IE PC
T.1
Tste
80 80
5
750 -750
1.5 150 -55M.50
UNIT
V V V mA mA W °C °C
1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
TO -230AB
EIAJ TOSHIBA
SC -46
2-10A1A
Mounting Kit NO. AC75 Weight : 1 . 9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Breakdown Voltage
CollectorEmitter
EmitterBase
DC Current Gain
SYMBOL ICBO I EB0
v (BR) CEO
V (BR)EB0 h FE(l) (Note) h FE(2)
TEST CONDITION VCB=30V, IE=0 VEB=5V, I C=0 I C=10mA, Ib=0 I E=0.1mA, lc=0
VcE...
