:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =2. 8W(Min.
(f=...
:)
SILICON
NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =2. 8W(Min.
(f=470MHz, Vcc=12.6V, Pi=0.6W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ VC c=12.6V, Pi=0.6W, f=470MHz
pa 39 MAX.
0R5MAX,
Unit in mm
—I i
M1 !
'
00.45
a
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CE0 v EB0 ic
PC
Ti
T stg
RATING 35 17
3.5 0.8
UNIT
7.5
175
-65-175
°C °C
1. EMITTER ^CASE^ 2. BASE 3. COLLECTOR
TOSHIBA
TC-17 TB-22C .
Weight : 3.7g
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
v (BR)CB0 v (BR) CEO
Emitter-Base Breakdown Voltage
v (BR)EB0
DC Current Gain Collector Output Capacitance
n FE Cob
Output ...
