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2SC2103A Dataheets PDF



Part Number 2SC2103A
Manufacturers Toshiba
Logo Toshiba
Description SILICON NPN TRANSISTOR
Datasheet 2SC2103A Datasheet2SC2103A Datasheet (PDF)

SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 'CBO 40 Collector-Emitter Voltage VCEO 18 Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature VEB.

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SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =27W (Min.) (f=175MHz, VC C=12.5V, Pi=4.2W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 'CBO 40 Collector-Emitter Voltage VCEO 18 Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature VEBO ic PC Ti 4.0 6.0 50 175 1. EMITTER 2. BASE a EMITTER 4. COLLECTOR Storage Temperature Range -stg -65-175 TOSHIBA 2— 10G1A ELECTRICAL CHARACTERISTICS (Ta=25°C) Mounting Kit No. AC57 Weight : 3.3g CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage SYMBOL iCBO TEST CONDITION V CB=15V, I E=0 v (BR) CBO I c=10mA, Ie=0 MIN. TYP. MAX. - - 1.0 40 - - Collector-Emitter Breakdown Voltage v (BR) CEO I c =25mA, Ib=0 18 - - Emitter -Base Breakdown Voltage DC.


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