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2SB755 Dataheets PDF



Part Number 2SB755
Manufacturers Toshiba
Logo Toshiba
Description SILICON PNP TRANSISTOR
Datasheet 2SB755 Datasheet2SB755 Datasheet (PDF)

2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation „ I (Tc=25°C) Junction Temperatu.

  2SB755   2SB755


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