:
2SB996
SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES . Good Linearity of hpg . Complementa...
:
2SB996
SILICON
PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES . Good Linearity of hpg . Complementary to 2SD1356
. Recommended for 20-25W High-Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm 0&2xO.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic IB PC
Tstg
RATING -80 -80 -5 -4
-0.4
30
150
-55~150
UNIT
JEDEC
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
TOSHIBA
2-10K1A
Weight : 2.0g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
ICBO lEBO
VCB=-80V, I E=0 VEB=-5V, I C=0
V(BR)CE0 IC=-50mA, Ib=0
DC Current Gain
hFE(l) (Note)
VCE=-5V, I C=-0.5A
Collector-Emitter Saturation Voltage
hFE(2) v CE(sat)
VC E=-5V, I C=-3A I C=-3A...
