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Part Number 2SA1195
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA1195 Datasheet2SA1195 Datasheet (PDF)

  2SA1195   2SA1195
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. FEATURES . Large Collector Current and Collector Power Dissipation Capability. (Pc=2.0W at Ta=25°C) . Designed for Complementary Use with 2SC2483. Unit in mm 9.9UAX. 0a2±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 C Tc=25 C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC PC Tstg RATING -160 -160 -1.5 -1.0 2.0 15 175 -55 -150 UNIT 1. BASE 2. COLLECTOR (FIN) a EMITTER TOSHIBA 2-10F1B Weight : 1.37g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain iCBO lEBO hFE(l) (Note) V CB=-150V, I E=0 V EB =-6V, I C=0 VCE=-5V, Ic=-200mA Collector-Emitter Saturation Voltage hFE(2) VC E=-5V.



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