DatasheetsPDF.com



Part Number 2SA1243
Manufacturers Toshiba
Logo Toshiba
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
Datasheet 2SA1243 Datasheet2SA1243 Datasheet (PDF)

  2SA1243   2SA1243
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1243 POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I blAbt AP PLICATIONS. FEATURES . Good Linearity of hEE . Complementary to 2SC3073 &8MAX. I52±0i2 F Unit in mm Si o . 0. 6 MAX -J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C T J T stg RATING UNIT -30 V -30 V -5 V -3 A -0.6 A 1.0 W 10 150 -55 -150 °C o C a 95 MAX. .! j Q6±ai5 | ) li M s o w H a6MAX. a .D 2.3 2.3 gpi efu rfjJL X < s H in H _j _ 1. BASE 2. COLLECTOR (PIN) & EMITTER JEDEC EIAJ TOSHIBA — — 2-7B1A ELECTRICAL CHARACTERISTICS (Ta=25°c) Weight : 0.36g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitte.



2SA1217 2SA1243 2SA1279


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)