Part Number |
2SA1243 |
Manufacturers |
Toshiba |
Logo |
|
Description |
SILICON PNP EPITAXIAL TYPE TRANSISTOR |
Datasheet |
2SA1243 Datasheet (PDF) |
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1243
POWER AMPLIFIER APPLICATIONS LttK KHUiU MNU LAK b I LKtU UU I PU I blAbt AP PLICATIONS.
FEATURES . Good Linearity of hEE . Complementary to 2SC3073
&8MAX.
I52±0i2
F
Unit in mm
Si
o . 0. 6 MAX
-J
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL v CBO VCEO Vebo ic IB
?C
T
J
T stg
RATING UNIT
-30 V
-30 V
-5 V
-3 A
-0.6
A
1.0 W
10
150 -55 -150
°C
o C
a 95 MAX. .!
j
Q6±ai5
|
) li
M
s
o w H
a6MAX.
a
.D
2.3 2.3
gpi efu rfjJL
X < s H in H
_j _
1. BASE 2. COLLECTOR (PIN) & EMITTER
JEDEC EIAJ TOSHIBA
— — 2-7B1A
ELECTRICAL CHARACTERISTICS (Ta=25°c)
Weight : 0.36g
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage Emitte.