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Part Number 2SA1279
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA1279 Datasheet2SA1279 Datasheet (PDF)

  2SA1279   2SA1279
—: ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES . Low Collector Saturation Voltage : VC E(sat)=-0.4V(Max.) (at I C=-3A) . High Speed Switching Time : t s tg=1.0/is(Typ. . Complementary to 2SC3239 MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -60 UNIT ia3MAX. )Zf3.2i 0.2 1* t 71^ X < 1 s to irf. 1 T" L. \ 1.4 + 0.25 o.7e -ai5 i 1 1.2 CO ' C5 +i o +o1 H t 55 S H 2.54 ± a 25 M2.54±0.85 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic -50 -5 C5d +1 =€I]Blz:_. Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature IB -1 25 150 JEDEC 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta =25°C) -55-150 TOSHIBA 2-10K1A Weight : 2. 0g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-o.



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