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Part Number 2SA1307
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA1307 Datasheet2SA1307 Datasheet (PDF)

  2SA1307   2SA1307
:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX. FEATURES . Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A . High Speed Switching Time : t stg =l .0As(Typ. . Complementary to 2SC3299 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -60 UNIT 7.0 " 03. 2 ±0.2 4 Vt-ja s M -k J 01 -H x' to H 1 1.4 + 0.25 11 a76-ai5 1 _2.54±0.25 • 1 . 1.2 2.54±C125 \ a a H Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic -50 -5 -5 + 1 !I! 1 2 31 Base Current Collector Power Ta=25°C Tc=25 u C IB -1 2.0 20 1. BASE 2. COLLECTOR 3. EMITTER Junction Temperature Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta==25°C) 150 -55-150 EIAJ TOSHIBA 2-10L1A Weig ht : 2 •ig CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, I E=0 - - -1 MA Emitter Cut-off Current Collector-Emitter Breakdown V.



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