Part Number |
2SA1307 |
Manufacturers |
Toshiba |
Logo |
|
Description |
Silicon PNP Transistor |
Datasheet |
2SA1307 Datasheet (PDF) |
:)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
1Q.3MAX.
FEATURES
. Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A
. High Speed Switching Time : t stg =l .0As(Typ. . Complementary to 2SC3299
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
SYMBOL VCBO
RATING -60
UNIT
7.0 "
03. 2 ±0.2
4
Vt-ja s M
-k J
01 -H
x'
to H
1
1.4
+ 0.25 11 a76-ai5
1
_2.54±0.25 •
1
. 1.2
2.54±C125
\
a a
H
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCEO VEBO ic
-50 -5 -5
+ 1
!I!
1 2 31
Base Current Collector Power
Ta=25°C Tc=25 u C
IB
-1
2.0 20
1. BASE 2. COLLECTOR 3. EMITTER
Junction Temperature
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta==25°C)
150
-55-150
EIAJ
TOSHIBA
2-10L1A
Weig ht : 2 •ig
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
ICBO
VCB=-50V, I E=0
- - -1 MA
Emitter Cut-off Current Collector-Emitter Breakdown V.