Part Number |
2SA1308 |
Manufacturers |
Toshiba |
Logo |
|
Description |
Silicon PNP Transistor |
Datasheet |
2SA1308 Datasheet (PDF) |
:)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
FEATURES . Low Collector Saturation Voltage
: VcE(sat)=-0.4V(Max.) at Ic=-3A . High Speed Switching Time : t s tg=l. 0-«s(Typ. . Complementary to 2SC3308.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VcBO
-100
V
Collector-Emitter Voltage Emitter-Base Voltage
VCEO VEBO
-80 V -7 V
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature Range
ic ICP PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Ta==25°C)
CHARACTERISTIC
SYMBOL
-5 A
-8
30 W
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
150 °C
-55-150 °C
EIAJ
TOSHIBA
2-10K1A
Weight : 2.08
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
ICBO lEBO
VCB=-100V, Ie=0 VEB=-7V, lc=0
V (BR) CEO IC=-10mA, Ib=0
-
-80
-
-1 dk -1 VA -V
DC Current Gain
hFE(l) (Note)
hF.