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Part Number 2SA1308
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet 2SA1308 Datasheet2SA1308 Datasheet (PDF)

  2SA1308   2SA1308
:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector Saturation Voltage : VcE(sat)=-0.4V(Max.) at Ic=-3A . High Speed Switching Time : t s tg=l. 0-«s(Typ. . Complementary to 2SC3308. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO -100 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -80 V -7 V Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range ic ICP PC Tj Tstg ELECTRICAL CHARACTERISTICS (Ta==25°C) CHARACTERISTIC SYMBOL -5 A -8 30 W 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER 150 °C -55-150 °C EIAJ TOSHIBA 2-10K1A Weight : 2.08 TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO VCB=-100V, Ie=0 VEB=-7V, lc=0 V (BR) CEO IC=-10mA, Ib=0 - -80 - -1 dk -1 VA -V DC Current Gain hFE(l) (Note) hF.



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