RCA30B

OOcn5LJD Solid State Division Power Transistors RCA30 RCA30B RCA30A RCA30C Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High·Speed·Switching Applications Features: JEDEC TO·220AB H·1535 30 Wat 25°C case temperature 3 A rated collector current Min. fT of 3 MHz at 10 V, 200 mA Designed for complementary use with RCA29, RCA29A, RCA29B, and RCA29C· n·p·n types* RCA30, RCA30A, RCA30B, and RCA30C are epitaxial·base, silicon p·n·p transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and driver and output stages of high·fidelity amplifiers. These new plastic power transistors are designed for com· plementary use with devices in the RCA29 series. They differ from each other in voltage ratings. * Technical data for the RCA29-series devices are given in RCA data bulletin File 583. MAXIMUM RATINGS, Absolute·Maximum Values: COLLECTOR·TO·BASE VOLTAGE .......