_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 586
D\1CTI3LJD
Solid State Division
Power Transistors
RCA32 RCA32B RCA32A RCA32C
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
For Power-Amplifier and High-Speed·Switching Applications
Features:
JEDEC TO·220 AB
• 40 Wat 25°C case temperature • 5 A rated collector current • Min. fT of 3 MHz at 10 V, 500 mA • Designed for complementary use with RCA31 ,
RCA31A, RCA31B, and RCA31C n·p·n types*
RCA30, RCA30A, RCA30B, and RCA30C are epitaxial·base, silicon p·n·p transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and. driver and output stages of high·fidelity amplifiers.
These new plastic power transistors are designed for com· plementary use with devices in the RCA31 series. They differ from each other in voltage ratings.
* Technical data for the RCA32 series devices are given in RCA data
bulletin File 583,
MAXIMU.