File No. 509 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OOm5LJD
Solid State Division
Power Transistors RCA41 0
,-
il-'I--~I. ''
t
il. .•" .
.
.
~~ .
...
•~.<'C~""-""•.. 1
JEDEC TD·3
High-Voltage, High-Power Silicon N-P-N Power Transistor
For Switching and Linear Applications in Military, Industrial, and Commercial Equipment
Features:
• Maximum safe-area-of-operation curves II Low saturation voltage: VCE(satl = 0.8 V (max.)
II High voltage rating: VCEO(sus) = 200 V • High dissipation rating: PT = 125 W
RCA-410 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter-site structure. This device employs the popular JED EC TO-3 package.
Featuring high breakdown-voltage ratings and low saturation-
voltage values, the RCA-410 is especially suitable for use in inverters, deflection circuits, switching regulators, highvoltage bridge amplifiers, ignition circuits. and other highvoltage switching applications.
MAXIMUM RATINGS, Absolu.