RCA1000

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 594 DDLn3LJD Solid State Division Power Transistors RCA1000 RCA1001 a-Ampere Silicon N-P-N Darlington Power Transistors For Use as Output Devices in General-Purpose Switching and Amplifier Applications JEOEC TO·3 Features: High de current gain: hFE = 1000 min_ at IC = 3 A Monolithic construction with built-in bas8e smitter shunt resistors RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits. ,-----------, II II II :I II IIL _ __3 _ka _ _1113_00.n_ _ _ -1 92:CS-19945RI Fig.1-Schematic diagram of RCA-toDD and RCA ·1001 Darlington power transistors. MAXIMUM RATINGS, Absolute·Maximum Values: COLLECTOR-TO-BASE VOLTAGE: With emit...