_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 594
DDLn3LJD
Solid State Division
Power Transistors
RCA1000 RCA1001
a-Ampere Silicon N-P-N Darlington Power Transistors
For Use as Output Devices in General-Purpose Switching and Amplifier Applications
JEOEC TO·3
Features:
• High de current gain: hFE = 1000 min_ at IC = 3 A
• Monolithic construction with built-in bas8e smitter shunt resistors
RCA-l000 and 1001 are monolithic silicon n-p-n Darlington transistors intended for medium-power applications as output devices. The double epitaxial construction of these units provides good forward and reverse second-breakdown capability_ Their high gain makes it possible for them to be driven directly from integrated circuits.
,-----------, II
II II
:I II
IIL _ __3 _ka _ _1113_00.n_ _ _ -1
92:CS-19945RI
Fig.1-Schematic diagram of RCA-toDD and RCA ·1001 Darlington power transistors.
MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR-TO-BASE VOLTAGE: With emit.