Part Number |
AT-42035 |
Manufacturers |
HP |
Logo |
|
Description |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Datasheet |
AT-42035 Datasheet (PDF) |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Technical Data
AT-42035
Features
• High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz
• High Gain at 1 dB Compression: 14.0 dB Typical G1dBat 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz
• Low Noise Figure: 1.9 dB Typical NFOat 2.0␣ GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Cost Effective Ceramic Microstrip Package
Description
Hewlett-Packard’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many
different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and o.