AT-64020

AT-64020 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is ­designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. Features High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz High Gain at 1 dB Compression: 10.0 dB Typical G1 dB at 2.0 GHz 6.5 dB Typical G1 dB at 4.0 GHz 35% Total Efficiency Emitter Ballast Resistors Hermetic, Metal/Beryllia Package 200 mil BeO...