4.8 V NPN Common Emitter Output Power Transistor for␣ GSM Class IV Phones
Technical Data
AT-36408
Features
• 4.8 Volt ...
4.8 V
NPN Common Emitter Output Power
Transistor for␣ GSM Class IV Phones
Technical Data
AT-36408
Features
4.8 Volt Pulsed Operation (pulse width = 577 µsec, duty cycle = 12.5%)
+35.0 dBm Pout @ 900 MHz, Typ.
65% Collector Efficiency @␣ 900 MHz, Typ.
9 dB Power Gain @ 900 MHz, Typ.
Internal Input Pre-Matching Facilitates Cascading
Applications
Output Power Device for GSM Class IV Handsets
SOIC-8 Surface Mount Plastic Package
Outline P8
Pin Configuration
BASE 1 EMITTER 2 COLLECTOR 3 EMITTER 4
8 BASE 7 EMITTER 6 COLLECTOR 5 EMITTER
Description
Hewlett Packard’s AT-36408 combines internal input prematching with low cost,
NPN power silicon bipolar junction
transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power, superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for batter...
