File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
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Power Transistors
Solid State D...
File No. 359 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
oornLlO
Power
Transistors
Solid State Division
2N5575 2N5578
Modified JEDEC TO-3 (O.060·ln.-Dia. Pins)
H·1811
High-Current, High-Power, Hometaxial-Base Silicon N-P-N
Transistors
For Linear and Switching Applications in Military, Commercial, and Industrial Equipment Features:
II Maximum safe-area-of operation curves
II ISIb-limit line beginning at 25 V II High-current capability
a Low saturation voltage at high beta a High-dissipation capability a Low thermal resistance
RCA-2N5575 and 2N5578° are high,current, high-power, hometaxial-base silicon n-p-n
transistors. They differ in maximum voltage and current ratings.
These power
transistors are intended for a wide variety of high-current, high-power linear and switching applications such as low· to medium·frequency amplifiers, switching and
linear
regulators, power-switching circuits, series- or shunt
regulator driver and output stages, dc-ta-de conv...