D\lCIBLJI]
Solid State Division
FileNo. 410
Power Transistors
2N5838 2N5839 2N5840
RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power transistors utilizing a multiple-emitter-site structure. These devices employ the popular ]EDEC TO-3 package; they differ mainly in voltage, currentgain, and VCE(sat) ratings.
Featuring high breakdown voltage ratings and low-saturation voltage values, the 2NS838, 2N5839 and 2N5840 are especially suitable for use in inverteIS, deflection circuits, switching regulators, high-voltage bridge amplifiers, ignition circuits, and other high-voltage switching applications.
** Formerly RCA Dev. types TA7513f TA7530, and TA7420 respectively.
MAXIMUM RATINGS, Absolute·MoKlmum Volues:
2N5838 2N5839 2N5840
*COLLECTOR-TO-SASE VOLTAGE, VCSO .••..•.. 275 300 375
COLLECTOR'TQ-EMITTER SUSTAINING VOLTAGE:
* :f~~ ~:::r::hl~:~~)~f) 250 275 350
-1.5 V, VCE.V(sus)" ••••• 275 300 375
With external base-to-emitter
n,resistance (RSE)'::: 50
.