2N6101

File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA 2N6099 2N6101 2N6103 ~~;,~ ~" JEDEC TO-220AB High-Current, Silicon N-P-N VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications Features: Low saturation voltage VCE(satl = 1 V max. at Ic = 4 A (2N6098, 2N6099) = =1 V max. at IC 5 A (2N6100. 2N6101) = =1 V max_ at IC 8 A (2N6102, 2N6103) a VERSAWATT package (molded-silicone plastic) a Maximum safe-area-of-operation curves Thermal-cvcle rating curve These RCA types are hometaxial-base silicon n-p-n transistors. Tvpes 2N609B, 2N6100. and 2N6102 have formed emitter and base leads for easv insertion into TO-66 sockets. Tvpes 2N6099, 2N6101, and 2N6103 are electricallv identical to the 2N609B, 2N6100, and 2N6102, respectively. These new VERSAWATT-package transistors differ in voltage ratings and in the currents at which the parameters ar...