File No. 676 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
oornLlD
Power Transistors
Solid State Div...
File No. 676 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
oornLlD
Power
Transistors
Solid State Division
2NI5106-2N61111, 21M6288-21Nl6293, 2!N16413D 21i\'l6416
COliector
2N6106 2N6289 2N6108 2N6291
2N6110 2N6293
~ '\.---- Emitter ___ Base
TO-220AA
H-1534Rl
lEpoftalltoal-lBase, S mean INI-P-INI and P-II\'I-rP VIEIRSAW A111" Trans istoll's
General-Purpose Medium-Power Types for Switching and Amplifier Applications
2N6107 2N6288
2N6109 2N6290 2N6111 2N6292 2N6475 2N6473
2N6476 2N6474 A- Emitter ',4-- Collector
Base H-1535Rl
,Features
C Low saturation voltages " VERSAWATT package (molded
silicone plastic) " Complementary n·p-n and p-n·p
types
" Thermal·cycling ratings g Maximum safe-area-of-operation curves
specified for dc operation
RCA-2N6106-2N6111, 2N62BB-2N6293, and 2N64732N6476 are epitaxial-base silicon
transistors supplied in a VERSAWATT package, The 2N62BB-2N6293. 2N6473, and 2N6474° are n-p-n complements of p-n-p types 2N61062N6111. 2N64...