Transistors. 40543 Datasheet

40543 Datasheet PDF


Part

40543

Description

Power Transistors

Manufacture

RCA

Page 4 Pages
Datasheet
Download 40543 Datasheet


40543 Datasheet
_"---_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 304
OO(]5LJD
Solid State
Division
Power Transistors
40542
40543
SILICON N·P·N, MOLDED SILICONE·PLASTIC 1I0MHAXIAL·BASE TRANSISTORS
RCA-40542 and -40543 are hometaxial**-base silicon
n-p-n power traDsis~ors employing a new plastic package
with formed leads which can be inserted into a TO·3
socket.
These types differ in voltage ratings and in the
current at which the parameters are controlled. The
40542 is intended as a complement to p-n-p type 40051
in complementry-symmetry output stages of audio-ampli-
fier circuits. The 40543 was designed specifically for
amplifier applications.
*Data for type 40051 appears in File No. 67.
·*"HOMETAXIAL" was coined by RCA from two words,
"homogeneous" and "axial," to provide a name for a
transistor structure in which the base region comprises
homogeneous resistivity silicon material in the axial direc-
tion {emitter...to-collector}. Hometaxial types provide
greater power-handling capability, lower saturation resist-
ance, and freedom from second breakdown.
FOR OUTPUT STAGES IN
AUDIO-AMPLIFIER CIRCUITS
40542 -- N-P-N Complement of 40051*
H·1532
40542 & 40543
For TO-3 Sockets
• Molded silicone-plastic package
• Low saturation voltage:
VCE(sat) = 1.0 V max. at IC = 2.5A (40542)
= 1.0 V max. at IC = 3.0 A (40543)
• Low thermal resistance:
eJ-C = 1.5 °C/W max.
,Absolute-Maximum Values:
MAXIMUM RATINGS
COLLECTOR-TO-EMITIER SUSTAINING VOLTAGE:
With external base-to-emitter resistance (RSE) = 100 n. . . . . ... VCER(sus)
EMITTER-TO-BASE VOLTAGE ••••••••••••••••••••••••••
COLLECTOR CURRENT •••••••••••••••••••••••••.••..
TRANSISTOR DISSIPATION: •••••••.•••••••••••••••••••
At case temperatures up to 250 C •••••••••••••••••••••••
At temperatures above 250 C •••••••••••• ~ •••••••••••••
PT
TEMPERATURE RANGE:
Storage & Operating (Junction)•••••••••••••••••••••••••
LEAD TEMPERATURE (During Soldering):
At distances:!!:' 1/16 in. fcom seating plane for 10 s max.
40542
50
6
40543
60
5
8
83 83
Derate linearly
to 0 Wat 1500 C.
-65 to 150
235
V
V
A
W
1()'67
428

40543 Datasheet
File No. 304 __________________________ 40542,40543
Characteristic
ELECTRICAL CHARACTERISTICS
Case Temperature (TCI = 250 C
TEST CONDITIONS
DC Voltage DC Current
Symbol
(V)
(A)
VCE VEB IC IB
LIMITS
Type
40542
Min. Max.
Type
40543
Min. Max.
Units
Coliector-CutoH Current
With external base..to..emitter
nresistance (RBE) = 100
ICER
40
50
Emi tter-Cutoff Curren t
lEBO
DC Forwarct-Current Transfer Ratio
4
hFE 4
Collector-to-Emitter Sustaining Voltage
With external base..to-emitter
resistance (RBE) = 100 n
VCER(sUS
Base-to-Emi tter Voltage
VBE
4
4
Collector-to-Emitter Saturation Voltage VCE(sat)
Gain-Bandwidth Product
Thermal Resistance·
(Junction-to-Case)
fT 4
Bl-C
50
2.5"
3.0"
0.2"
- 1.0
--
- 5.0
20 70
--
50 -
2.5"
3.0"
2.5" 0.25
3.0" 0.3
-
-
-
-
0.5 0.8
1.7
-
1.0
-
2.8
- 1.5
--
-
,nA
1.0
- 5,0 mA
--
20 70
60 -
V
-
-
-
1.7
V
--
- 1.0
V
0.8 2.8 MHz
- 1.5 °C/W
"Pulsed; pulse duration = 300 p.s, duty factor = 1.8%.
TERMINAL CONNECTIONS FOR TYPES
40542 & 40543
Lead No. 1- Base
Lead No.2 - Emitter
Mounting Flange - Collector
429


Features Datasheet pdf _"---_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 304 OO (]5LJD Solid State Division Power Tran sistors 40542 40543 SILICON N·P·N, M OLDED SILICONE·PLASTIC 1I0MHAXIAL·BAS E TRANSISTORS RCA-40542 and -40543 are hometaxial**-base silicon n-p-n power traDsis~ors employing a new plastic pac kage with formed leads which can be ins erted into a TO·3 socket. These types differ in voltage ratings and in the cu rrent at which the parameters are contr olled. The 40542 is intended as a compl ement to p-n-p type 40051 in complement ry-symmetry output stages of audio-ampl ifier circuits. The 40543 was designed specifically for amplifier applications . *Data for type 40051 appears in File No. 67. ·*"HOMETAXIAL" was coined by R CA from two words, "homogeneous" and "a xial," to provide a name for a transist or structure in which the base region c omprises homogeneous resistivity silico n material in the axial direction {emit ter...to-collector}. Hometaxial types provide greater power-han.
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