40895 Datasheet: Power Transistors





40895 Power Transistors Datasheet

Part Number 40895
Description Power Transistors
Manufacture RCA
Total Page 5 Pages
PDF Download Download 40895 Datasheet PDF

Features: File No. 548 Dl(]5LJ[J Solid State Divis ion RF Power Transistors 40894 40896 4 0895 40897 JEDEC TO·72 H-1299 High - Frequency Silicon N-P-N Transistors F or TV·Tuner, FM and AM/FM "Front·End" , and IF Amp,lifier, Oscillator, and Co nverter Service Features: • High gain ·bandwidth products: fT = 1200 MHz typ o for tuner types = 800 MHz typo for if -amplifier types • Very low collector ·to·base feedback capacitance: Ccb = 0.7 pF typo for 40894.40895 • Low noi se figure: 3 dB typo at 200 MHz for rf amplifier type RCA-40894; 40895. 40896 . and 40897 are high-frequency n-p-n si licon devices characterized especially for rf. mixer. oscillator. and if stage s of vhf. SSB. and FM receivers. These devices utilize a hermetically sealed f our-lead JEDEC TO-72 package_ All activ e elements of the transistor are insula ted from the case. which may be grounde d by means of the fourth lead in applic ations requiring minimum feedback capac itance. shielding of the device. or both. • High power gain.

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File No. 548
D\l(]5LJ[J
Solid State
Division
RF Power Transistors
40894 40896
40895 40897
JEDEC TO·72
H-1299
High - Frequency
Silicon N-P-N Transistors
For TV·Tuner, FM and AM/FM "Front·End", and
IF Amp,lifier, Oscillator, and Converter Service
Features:
• High gain·bandwidth products:
fT = 1200 MHz typo for tuner types
= 800 MHz typo for if-amplifier types
• Very low collector·to·base feedback capacitance:
Ccb = 0.7 pF typo for 40894.40895
• Low noise figure:
3 dB typo at 200 MHz for rf amplifier type
RCA-40894; 40895. 40896. and 40897 are high-frequency
n-p-n silicon devices characterized especially for rf. mixer.
oscillator. and if stages of vhf. SSB. and FM receivers.
These devices utilize a hermetically sealed four-lead JEDEC
TO-72 package_ All active elements of the transistor are in-
sulated from the case. which may be grounded by means of
the fourth lead in applications requiring minimum feedback
capacitance. shielding of the device. or both.
• High power gain as neutralized amplifier:
GpE = 15 dB min. at 200 MHz (40894)
• High power output as uhf oscillator:
POE = 20 mW typ_ at 500 MHz (40896)
• Low noise figure:
NF = 4_5 dB max_ at 200 MHz (40894)
• Low collector-ta-base time constant:
rb'Cc = 14 ps max_
MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE ... ___ . ______ . ____ .... .
COLLECTOR-TO-BASE VOLTAGE .. _. ______ ..... _.. _.. _.... .
EMITTER-TO-BASE VOLTAGE. _... _.. ____ .. ___ ............ .
CONTINUOUS COLLECTOR CURRENT ...................... .
TRANSISTOR DiSSiPATION ............................... .
With heat sink. at case temperatures up to 25°C ............... .
With heat sink, at case temperatures above 25°C _.. _... ____ .. _. _
At ambient temperatures up to 25°C ....................... .
At ambient temperatures above 25°C .......... _............ .
TEMPERATURE RANGE:
Storage & Operating (Junction) ........................... .
CASE TEMPERATURE (During soldering):
At distances ~ 1/32 in. (0.8 mm) from seating
surface for 10 seconds max. . .......................... .
VCEO
VCBO
VEBO
Ie
PT
12
20
2.5
50
300
Derate linearly 1.71
200
Derate linearly 1.14
-65 to +200
265
V
V
V
rnA
mW
mwl"e
mW
mwl"e
°e
°c
12-71
443

              






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