41500 Transistors Datasheet

41500 Datasheet, PDF, Equivalent


Part Number

41500

Description

Power Transistors

Manufacture

RCA

Total Page 4 Pages
Datasheet
Download 41500 Datasheet


41500
_________________________________ File No. 772
OOQ8LJD
Solid State
Division
Power Transistors
41500
JEDEC TO-220AB
Epitaxial-Base, Silicon N-P-N
VERSAWATT Transistor
General-Purpose Medium-Power Type for
Switching and Amplifier Applications
H-1535R1
Features
• Low saturation voltages
• VERSAWATT package (molded silicone plastic)
• Maximum safe-area-of-operation curves specified
for de operation
RCA-41500 is an epitaxial-base silicon n-p-n transistor supplied
in the JEDEC TO-220AB version of the VERSAWATT package.
This transistor is intended for a variety of medium-power
switching and amplifier applications. such as series and shunt
regulators and driver and output stages of high-fidelity ampli-
fiers. The 41500 may also be used as the n-p-n complement
of p-n-p type 41501_ (Data for the 41501 are supplied in bulle-
tin File No. 770.)
MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE ................................ . VCBO
COLLECTOR-TO-EMITTER VOLTAGE:
With external base-supply resistance (Rse) =0 100 n,
=and base supply voltage (Vee) a .•••.•.........•................ V CEX
With base open ....................•.......................... V CEO
EMITTER-TO-BASE VOLTAGE ................................... . V EBO
COLLECTOR CURRENT (Continuous)
At case temperature ~ 10SoC ....•............................... IC
BASE CURRENT (Continuous)
At case temperature ~ 130°C ......•............................. IS
TRANSISTOR DISSIPATION:
PT
::~:::.::::;::~;::~~::~~~<::::::::::::::::::::::::::::::: :
At ambient temperatures up too25 C ...............•..............
~::: ::~::~::~~:: ~~O~C::
:::::
• : : : :: : : : : : : :: : :: : : :: : : :: : : : : : : : :
At ambient temperatures above 25°C ............................. .
TEMPERATURE RANGE:
Storage and Operating (Junction) ................................ .
LEAD TEMPERATURE (During Soldering):
At distance ~ 1/8 in. (3.17 mm) from case for 10 s max. . ............ .
35 V
35 V
25 V
3V
A
3A
40
16
1.8
Derate linearly at 0.32 W/oC. or see Fig. 4,
Derate linearly at 0.32 W/oC
Derate linearly at 0.0144 wtc
W
W
W
-65 to 150
°c
235 °c
452 5-74

41500
File No. 772 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41500
ELECTRICAL· CHARACTERISTICS, At Case Temperature (TC) = 25°C
TEST CONDITIONS
CHARACTERISTIC
SYMBOL
VOLTAGE
Vdc
CURRENT
Adc
Collector-Cutoff Current:
With external base-ta-emitter resistance
(RBE) = 100 n
'CER
VCE VBE 'C
30
'B
Emitter-Cutoff Current
Collector-to-Emitter Sustaining Voltage:
With base open
'EBO
VCEO(sus)
-3 0
O_la 0
With external base-to-emitter
resistance (RBE) = 100 n
VCER(sus)
0_1
DC Forward-Current Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
.Common-Emitter, Small-Signal, Short-
Circuit, Forward-Current Transfer
Ratio (f = 50 kHz)
Gain-Bandwidth Product
Magnitude of Common-Emitter, Small-
Signal, Short-Circuit, Forward Current
Transfer Ratio (f = 1 MHz)
Collector-to-Base Capacitance
(f=' MHz, VCB= 10V)
hFE
VBE
VCE(sat)
4
4
hfe 4
fT 4
Ihfel
4
Cobo
la
la
,a 0_'
0.5
0_5
0_5
0
Thermal Resistance:
Junction-to-Case
Junction-to-Ambient
ROJC
ROJA
apulsed; pulse duration = 300 /lS; rep. rate = 60 Hz; duty factor <;;. 2%.
CAUTION: The sustaining voltage V CER(sus) MUST NOT be measured on a curve tracer_
LIMITS
41500
UNITS
Min. Max.
- 0.25
mA
-1
mA
25 -
35 -
25 -
- 1.5
-1
V
V
V
20 -
4-
MHz
4-
- 250
pF
- 3_125 °CIW
- 70
120.0
IW
6~V :r~--l
60Hz I
I
,I
L_____ J
CHOPPER TYPE
MERCURY RELAY
p e. B JML 81308,
CLARE 1028, OR
EQUIVALENT
loon
Il2w
I5n
5W
2.5mH
J W MILLER No 4533,
OR EQUIVAl ENT
---0
VERT.
In,J%,1/2W
(NON-INDUCTIVE)
GND
OSCILLOSCOPE
INPUT
HEWLETT-PACKARD
MODEL No 130B,
OR EQUIVALENT
HQRIZ
Vee
92C5-24059
Fig. 7 - Circuit used to measured sustaining voltage VCER(sus).
t ~e:Rt'"')
el tOO
uu
j!:! a
35
3 COLLECTOR-TQ-EMITTER VOLTAGE
(VCE 1- V
92C5-24060
"The sustaining voltage, VCER(sus). is acceptable when the
traces fall to the right and above point"A".
Fig. 2 - Oscilloscope display for measurement of sustaining voltage
(test circuit shown in Fig. 1).
453


Features _________________________________ File N o. 772 OOQ8LJD Solid State Division P ower Transistors 41500 JEDEC TO-220AB Epitaxial-Base, Silicon N-P-N VERSAWAT T Transistor General-Purpose Medium-Pow er Type for Switching and Amplifier App lications H-1535R1 Features • Low s aturation voltages • VERSAWATT packag e (molded silicone plastic) • Maximum safe-area-of-operation curves specifie d for de operation RCA-41500 is an epi taxial-base silicon n-p-n transistor su pplied in the JEDEC TO-220AB version of the VERSAWATT package. This transistor is intended for a variety of medium-po wer switching and amplifier application s. such as series and shunt regulators and driver and output stages of high-f idelity amplifiers. The 41500 may also be used as the n-p-n complement of p-n- p type 41501_ (Data for the 41501 are s upplied in bulletin File No. 770.) MAX IMUM RATINGS. Absolute-Maximum Values: COLLECTOR-TO-BASE VOLTAGE ............ .................... . VCBO COLLECTOR-TO-EMITTER VOLTAGE: Wit.
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