41506 Transistors Datasheet

41506 Datasheet, PDF, Equivalent


Part Number

41506

Description

Power Transistors

Manufacture

RCA

Total Page 4 Pages
Datasheet
Download 41506 Datasheet


41506
File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
DDJIDLJD
Solid State
Division
Power Transistors
41506
High-Voltage, High-Power
Silicon N-P-N Power Transistor
For Switching and Linear Applications
JEOEC TO-3
Features:
• Maximum safe-area-of-operation curves
a Low saturation voltage: VCE(satl ~ 1.5 V (max.)
.. High voltage rating: VCEO(SUS) ~ 200 V
• High dissipation rating: PT ~ 100 W
The RCA-41506 is an epitaxial silicon n-p-n power transistor
utilizing a multiple-emitter- site structure. This device em-
ploys the popular JEDEC TO-3 package.
The 41506 features high breakdown-voltage ratings and low
saturation-voltage values and is especially suitable for use in
inverters, switching regulators, high-voltage bridge amplifiers,
and other high-voltage switching applications_
MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE _ _ _ _ _ _ _
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With base open. • • • • • • •
EMITTER-TO-BASE VOLTAGE _ _ _
CONTINUOUS COLLECTOR CURRENT
PEAK COLLECTOR CURRENT _
CONTINUOUS BASE CURRENT
TRANSISTOR DISSIPATION:
At case temperatures up to 2SoC and VeE up to 40 V
At case temperatures up to 2SoC and VeE above 40 V
At case temperatures above 2SoC and VeE above 40 V
TEMPERATURE RANGE:
Storage .and Operating (Junction) • • • • • •
PIN TEMPERATURE lOuring Soldering):
At distances~1/32 in. 10.8 mm) from seating plane for 10 s max..
VCBO
200
VCEOlsus)
VEBO
IC
ICM
IB
PT
200
4
3
5
1.5
100
See Fig.4
See Figs. 3 and 4
-65 to 200
230
V
V
V
A
A
A
W
°c
°c
5-74 471

41506
41506 _____________________________ FileNo.776
ELECTRICAL CHARACTERISTICS, Case Temperature (Tel = 25°C Unless Otherwise Specified
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC VOLTAGE
V
OCCURRENT
(A)
VCE VEB
IC
IB
Collector Cutoff Current:
With base open
Emitter-Cutoff Current
DC Forward-Current Transfer Ratio
ICED
lEBO
hFE
200
4
3
2a
Collector-to-Emitter Sustaining
Voltage:
With base open
(See Figs. 1 and 2)
Base·to·Emitter Saturation Voltage
VCEO(sUS)
VBE(sat)
0_2
2a 0.35
Collector-ta-Emitter Saturation
Voltage
Second-Breakdown Collector Current:
(With base forward-biased)
Pulse duration (non·repetitive) = 1 s
VCE(sat)
ISlbc
40
2a 0.35
Thermal Resistance (Junction-to·Case)
ROJC
10
5
<a Pulsed; pulse duration 350 lotS, duty factor == 2%.
b CAUTION: The sustaining voltage VCEO(sUS) MUST NOT be measured on a curve tracer. The
sustaining voltage should be measur~d by means of the test circuit shown in Fig.1.
C IS/b is defined as the current at which second breakdown occurs at a specified collector voltage
with the emitter-base junction forward-biased for transistor operation in the active region.
LIMITS
Min. Max.
5
10
8-
200b
-
-
2.5
-
2
1.5
-
1.75
UNITS
rnA
rnA
V
V
V
A
°CIW
HORIZONTAL
INPUT
PUSH
TO
TEST
, - - - - - - - - - - 0 O..J... ---(+)vcc
TEKTRONIX OSCILLOSCOPE
MODEL RM- 503.0~ EOUIY.
vERTICAL
INPUT
CLARE
MODEL No.HGP·2034,
OR EQUtVALENT
92CS·t92B6RI
Fig. 1 - Circuit used to measure sustaining voltage. VCEO(sus).
1
1
!
"'I----------1J1 -
1
I
1
1
:I
1
200
COLLECTOR-TO - EMIT TE R
VOLTAGE (VeE)-V
THE SUSTAINING VOL-':AGE VCEO (lUI) IS
ACCEPTABLE WHEN THE TRACE FALLS
TO THE RIGHT AND ABOVE POINT ~A~
92CS-2420t
Fig.2 - Oscilloscope display for measurement of sustaining
voltage (test circuit shown in Fig. 1).
472


Features File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ DDJIDLJD Solid State Division Power Tr ansistors 41506 High-Voltage, High-Pow er Silicon N-P-N Power Transistor For S witching and Linear Applications JEOEC TO-3 Features: • Maximum safe-area- of-operation curves a Low saturation vo ltage: VCE(satl ~ 1.5 V (max.) .. High voltage rating: VCEO(SUS) ~ 200 V • H igh dissipation rating: PT ~ 100 W The RCA-41506 is an epitaxial silicon n-p- n power transistor utilizing a multiple -emitter- site structure. This device e mploys the popular JEDEC TO-3 package. The 41506 features high breakdown-volta ge ratings and low saturation-voltage values and is especially suitable for u se in inverters, switching regulators, high-voltage bridge amplifiers, and oth er high-voltage switching applications_ MAXIMUM RATINGS, Absolute-Maximum Val ues: COLLECTOR-TO-BASE VOLTAGE _ _ _ _ _ _ _ COLLECTOR-TO-EMITTER SUSTAINING V OLTAGE: With base open. • • • • • • • EMITTER-TO-.
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