41506

File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ DDJIDLJD Solid State Division Power Transistors 41506 High-Voltage, High-Power Silicon N-P-N Power Transistor For Switching and Linear Applications JEOEC TO-3 Features: Maximum safe-area-of-operation curves a Low saturation voltage: VCE(satl ~ 1.5 V (max.) .. High voltage rating: VCEO(SUS) ~ 200 V High dissipation rating: PT ~ 100 W The RCA-41506 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter- site structure. This device employs the popular JEDEC TO-3 package. The 41506 features high breakdown-voltage ratings and low saturation-voltage values and is especially suitable for use in inverters, switching regulators, high-voltage bridge amplifiers, and other high-voltage switching applications_ MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR-TO-BASE VOLTAGE _ _ _ _ _ _ _ COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With base open. EMITTER-TO-...