2N6354

File No. 582 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OOcn5LJ1] Solid State Division Power Transistors 2N6354 120-Y, 10-A, 140-W Silicon N-P-N Transistor For Switching Applications in Military and Industrial Equipment JEOEC TO·3 Features: High VCEO(SUS): 120 V II Maximum safe-area-of operation curves Low saturation voltage: VCE(sat) ~ 0.5 V a Fast switching speeds at IC = 5 A: tr < 0.3p.s ts~ljJ.s tl ~O.2p.s High dissipation rating: PT = 80 W at 1000 C = 140 W at 250 C RCA type 2N6354° is an epitaxial silicon n·p-n power transistor with a multiple-emitter-site structure. The device is supplied in the JEDEC TO·3 package_ Typical high-speed switching applications for the 2N6354 include switching-control amplifiers operated from a 48-V (nominal) power supply, power gates, switching regulators, dc-de converters, and power oscillators_ Formerly RCA Dev. No. TA7534. MAXIMUM RA,TINGS, Absolute-Maximum Values: "COLLECTOR-TO-BASE VOLTAGE .. _. ...