2N6389

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 617 rnrnLJD Solid State Division RF Transistors 2N6389 I,~',~I~i~ ,I II 'I /1 J JEDECTO-72 H-1299 UHF/MATV Low-Noise Silicon N-P-N Transistor For High-Gain Small'Signal Applications in UHF TV RF Amplifiers and UHF MATV Amplifiers Features: Low noise figure: NF = 3 dB (typ.) at 450 MHz, 1.5 mA = 4 dB (typ.) at 890 MH~, 1.5 mA = 6 dB (typ.) at 890 MHz, 10 mA High gain (tuned, unneutralized): GpE = 15 dB (min.) at 890 MHz RCA 2N638ge is an epitaxial silicon n-p-n planar transistor intended for low-power, small-signal applications where both low noise and high gain are desirable. It utilizes a hermetically sealed four-lead JEDEC TO-72 package. All of the elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead. eFormerly RCA No. 40989. High gain·bandwidth product Large dynamic range ,-ow distortion Low collector-base capacitance MAXIMUM ...